3N174 MOSFET P-Ch Enhancement transistor
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3N174 MOSFET P-Ch Enhancement transistor
3N174 P-channel Enhancement MOSFET transistor. V(BR)DSS (V) 30. V(BR)GSS (V) 30. I(D) Max. (A) 20m. Absolute Max. Power Diss. (W) 360m. Maximum Operating Temp (C) 200. I(GSS) Max. (A) 2.5p. r(DS)on Max. (Ohms) 1.0k. g(fs) Min. (S) Trans. conduct. 400u. @V(DS) (V) (Test Condition) 15. C(iss) Max. (F) 4.0p. (r) Max. (s) Rise time 50n. t(f) Max. (s) Fall time. 100n.
Package Style TO-72.
LIMITED TO CURRENT INVENTORY
3 In Stock.